comset semiconductors 1 the BD132are pnn transistors mounted in jedec to-126 plastic package. medium power applications. npn complements are bd131 . silicon planar epitaxial power transistors pnp BD132 npn bd131 absolute maximum ratings symbol ratings value unit -v ceo collector-emitter voltage 45 v -v cbo collector-base voltage 45 v -v ebo emitter-base voltage 4 v symbol ratings value unit -i c 3 i c collector current -i cm 6 a base current (peak value) -i bm 0.5 i b reverse base current (peak value) +i bm 0.5 a p t total power dissipation @ t mb = 60c 15 watts t j junction temperature 150 c t stg storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-mb thermal resistance, junction to mouting base 6 k/w
comset semiconductors 2 pnp BD132 npn bd131 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i e =0 , - v cb =40 v - - 5 -i cbo collector cut-off current i e =0 , - v cb =40 v , t j = 150c - - 500 a -i ebo emitter cut-offcurrent i c =0, -v eb =3 v - - 5 a -i c =0.5 a, -i b =50 ma - - 0.3 -v ce(sat) collector-emitter saturation voltage -i c =2.0 a, -i b =200 ma - - 1.2 v -i c =0.5 a, -i b =50 ma - - 0.7 -v be(sat) base-emitter saturation voltage -i c =2.0 a, -i b =200 ma - - 1,5 v -v ce =12 v, -i c =500m a 40 - - h fe dc current gain -v ce =1 v, -i c =2 a 20 - - mechanical data case to-126 dimensions mm inches min max min max a 7.4 7.8 0.295 0.307 b 10.5 10.8 0.413 0.425 c 2.4 2.7 0.094 0.106 d 0.7 0.9 0.027 0.035 e 2.2 typ. 0.087 typ. f 0.49 0.75 0.019 0.029 g 4.4 typ. 0.173 typ. h 2.54 typ. 0.100 typ. l 15.7 typ. 0.618 typ. m 1.2 typ. 0.047 typ. n 3.8 typ. 0.149 typ. p 3.0 3.2 0.118 0.126 pin 1 : emitter pin 2 : collector case : base
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